(Hong Kong)
Product Summary
The TLP251F is a transistor inverter. It consists of a GaAlAs light emitting diode and an integrated photodetector. This unit is 8-lead DIP package. The TLP251F is suitable for gate driving circuit of IGBT or power MOS FET. Especially It is capable of direct gate drive of lower power IGBTs.
Features
TLP251F features: (1)Input threshold current: IF = 5mA (max.); (2)Supply current: 11mA (max.); (3)Supply voltage: 10 to 35V; (4)Output peak current: ±0.4A (max.); (5)Switching time: tpHL, tpLH = 1μs (max.); (6)Isolation voltage: 2500Vrms(min.); (7)UL recognized: UL1577, file no. E67349; (8)Option (D4) type VDE approved: DIN EN 60747-5-2, certificate no. 40011913; Maximum operating insulation voltage: 1140VPK; Highest permissible over voltage: 6000VPK.
Diagrams
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 TLP251F |
Other |
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Data Sheet |
Negotiable |
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Other |
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Data Sheet |
Negotiable |
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Data Sheet |
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Data Sheet |
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Data Sheet |
Negotiable |
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Other |
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Data Sheet |
Negotiable |
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Data Sheet |
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