(Hong Kong)
Product Summary
The IRFU120NPBF is the Fifth Generation HEXFETs from International Rectifer which ulilizes advanced progressing techniques to achieve the lowest possible on resistance per silicon area. This benefit, combined with the fast swithing speed and ruggedized device design that HEXFET Power MOSFET IRFU120NPBF is well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The D-PAK is designed for surface mounting using vapor phase infrared or wave soldering techniques. The straight lead version(IRFU series) is for through hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications.
Parametrics
IRFU120NPBF absolute maximum ratings: (1)ID Continuous Drain current: 6.6 to 9.4A; (2)IDM Pulsed Drain Current: 38A; (3)PD Power Dissipation: 48W; (4)VGS Gate to Source Voltage: ±20V; (5)EAS Single Pulse Avalanceche Energy: 91mJ; (6)IAR Avalanche Current: 5.7A; (7)EAR Repetitive Avalenche energy: 4.8mJ; (8)dv/dt Peak Diode recovery dv/dt: 5.0 V/ns; (9)TJ operating Junction and Storage Temperature Range: -55 to 175℃.
Features
IRFU120NPBF features: (1)Surface mount; (2)Straight Lead; (3)Advanced Process Technology; (4)Fast Switching; (5)Fully avalanche Rated; (6)Lead Free.
Diagrams
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 IRFU120NPBF |
International Rectifier |
MOSFET MOSFT 100V 9.1A 210mOhm 16.7nC |
Data Sheet |
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| Image | Part No | Mfg | Description | |
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Data Sheet |
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Data Sheet |
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Data Sheet |
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Data Sheet |
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IRFU024N |
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Data Sheet |
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IRFU024NPBF |
International Rectifier |
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Data Sheet |
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