IRFU120NPBF

Fast Switching, TO251, 6.6 to 9.4A Continuous Drain current, 48W Power Dissipation

Rated 5 Rating 5 | reviews | Write a review

Price:: US $0.25~0.27 / piece [Get Latest Price]

Reference price:

Qty (lots)	Price/lot
	US $0.25~0.27

PartNumber:: IRFU120NPBF

Brand:: International Rectifier - IR | Pack: TO | D/C: 11+

Availability:: Supply Ability: 10000/Week Can Ship Immediately
Delivery: 10-15 Business Days (ships out within 3 Business days)

Quantity:: piece

Total Price:: US $0

Place Order via Escrow Service

Sold By

Mr. James Blunt's store

(Hong Kong)

add to my favourite

100% Positive feedback

Detailed seller ratings

Visit Store

Contact Now

Esrcow Service

Place orders confidently and securely via it

Safe payments
Quick and easy transactions
Free service charges

Learn More >>

Previous Next

Products Upload time: 2011-07-26

From Other Seller

Part Number:IRFU120NPBF
US $0.25 - 0.27
EKY-160ELL121MF11D

US $0.10 - 1.00 / Piece
(0) Remove
MOC3063

US $0.32 - 1.50 / Piece
(0) Remove
Quantity:

piece

Product Summary

The IRFU120NPBF is the Fifth Generation HEXFETs from International Rectifer which ulilizes advanced progressing techniques to achieve the lowest possible on resistance per silicon area. This benefit, combined with the fast swithing speed and ruggedized device design that HEXFET Power MOSFET IRFU120NPBF is well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The D-PAK is designed for surface mounting using vapor phase infrared or wave soldering techniques. The straight lead version(IRFU series) is for through hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications.

Parametrics

IRFU120NPBF absolute maximum ratings: (1)ID Continuous Drain current: 6.6 to 9.4A; (2)IDM Pulsed Drain Current: 38A; (3)PD Power Dissipation: 48W; (4)VGS Gate to Source Voltage: ±20V; (5)EAS Single Pulse Avalanceche Energy: 91mJ; (6)IAR Avalanche Current: 5.7A; (7)EAR Repetitive Avalenche energy: 4.8mJ; (8)dv/dt Peak Diode recovery dv/dt: 5.0 V/ns; (9)TJ operating Junction and Storage Temperature Range: -55 to 175℃.