(Hong Kong)
Product Summary
The IRLML2502 is a HEXFET Power MOSFET. It utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that IRLML2502 is well known for, provides the designer with an extremely efficient and reliable device for use in battery and load management. The low profile (<1.1mm) of the Micro3 allows the IRLML2502 to fit easily into extremely thin application environments such as portable electronics and PCMCIA cards. The thermal resistance and power dissipation are the best available.
Parametrics
IRLML2502 absolute maximum ratings: (1)VDS Drain- Source Voltage: 20V; (2)ID Continuous Drain Current, VGS @ 4.5V: 4.2A(TA=25℃); (3)ID Continuous Drain Current, VGS @ 4.5V: 3.4A(TA=70℃); (4)IDM Pulsed Drain Current: 33A; (5)PD Power Dissipation: 1.25W(TA=25℃); (6)PD Power Dissipation: 0.8W(TA=70℃); (7)Linear Derating Factor: 0.01 W/℃; (8)VGS Gate-to-Source Voltage: ±12 V; (9)TJ, TSTG Junction and Storage Temperature Range: -55℃ to + 150℃.
Features
IRLML2502 features: (1)Ultra Low On-Resistance; (2)N-Channel MOSFET; (3)SOT-23 Footprint; (4)Low Profile (<1.1mm); (5)Available in Tape and Reel; (6)Fast Switching; (7)Lead-Free.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
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 IRLML2502 |
Other |
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Data Sheet |
Negotiable |
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IRLML2502GTRPBF |
International Rectifier |
MOSFET MOSFT 20V 4.2A 45mOhm 8nC Log Lvl |
Data Sheet |
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IRLML2502TRPBF |
International Rectifier |
MOSFET MOSFT 20V 4.2A 45mOhm 8nC Log Lvl |
Data Sheet |
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IRLML2502TR |
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MOSFET N-CH 20V 4.2A SOT-23 |
Data Sheet |
Negotiable |
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