Product Summary

The IRLML2402TRPBF is a international rectifier. Fifth generation HEXFETs from international recitifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

Parametrics

IRLML2402TRPBF maximum ratings: (1)ID@TA=25℃ Continuous drain current,VGS@4.5V: 1.2A; (2)ID@TA=70℃ Continuous drain current,VGS@4.5V: 0.95A; (3)IDM Pulsed drain current: 7.4A; (4)Power dissipation: 540mW; (5)Linear derating voltage: ±12V; (6)Peak diode recovery: 5.0V/ns; (7)Junction and storage temperature range: -55 to +150℃.

Features

IRLML2402TRPBF features: (1)Generation V Technology; (2)Ultra low on-resistance; (3)N-channel MOSFET; (4)SOT-23 footprint; (5)Low profile<1.1mm; (6)Available in tape and reel; (7)Fast switching.

Diagrams

IRLML2402TRPBF Gate charge test circuit

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
IRLML2402TRPBF
IRLML2402TRPBF

International Rectifier

MOSFET MOSFT 20V 1.2A 250mOhm 2.6nC LogLvl

Data Sheet

0-1: $0.28
1-25: $0.16
25-100: $0.10
100-250: $0.09
Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
IRLM110A
IRLM110A

Other


Data Sheet

Negotiable 
IRLM110ATF
IRLM110ATF

Fairchild Semiconductor

MOSFET 100V N-Channel a-FET Logic Level

Data Sheet

Negotiable 
IRLM120A
IRLM120A

Other


Data Sheet

Negotiable 
IRLM120ATF
IRLM120ATF

Fairchild Semiconductor

MOSFET 100V N-Channel a-FET Logic Level

Data Sheet

Negotiable 
IRLM210A
IRLM210A

Other


Data Sheet

Negotiable 
IRLM210ATF
IRLM210ATF

Fairchild Semiconductor

MOSFET 200V N-Channel a-FET Logic Level

Data Sheet

Negotiable