(Hong Kong)
Product Summary
Advanced HEXFET Power MOSFET IRFZ44VPBF from International Rectifier utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
Parametrics
IRFZ44VPBF absolute maximum ratings: (1)ID @ TC = 25℃, Continuous Drain Current, VGS @ 10V: 55A; (2)ID @ TC = 100℃, Continuous Drain Current, VGS @ 10V: 39A; (3)IDM Pulsed Drain Current: 220A; (4)PD @TC = 25℃, Power Dissipation: 115 W; Linear Derating Factor 0.77 W/℃; (5)VGS, Gate-to-Source Voltage: ± 20 V; (6)EAS, Single Pulse Avalanche Energy: 115 mJ; (7)IAR Avalanche Current: 55 A; (8)EAR, Repetitive Avalanche Energy: 11 mJ; (9)dv/dt, Peak Diode Recovery dv/dt: 4.5 V/ns; (10)TJ: -55 to + 175℃.
Features
IRFZ44VPBF features:(1)Advanced Process Technology; (2)Ultra Low On-Resistance; (3)Dynamic dv/dt Rating; (4)175°C Operating Temperature; (5)Fast Switching; (6)Fully Avalanche Rated; (7)Optimized for SMPS Applications; (8)Lead-Free
Diagrams
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 IRFZ44VPBF |
International Rectifier |
MOSFET MOSFT 60V 55A 16.5mOhm 44.7nC |
Data Sheet |
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IRFZ10 |
Vishay/Siliconix |
MOSFET N-Chan 60V 10 Amp |
Data Sheet |
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IRFZ10, SiHFZ10 |
Other |
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Data Sheet |
Negotiable |
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IRFZ14 |
Vishay/Siliconix |
MOSFET N-Chan 60V 10 Amp |
Data Sheet |
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IRFZ14, SiHFZ14 |
Other |
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Data Sheet |
Negotiable |
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IRFZ14L |
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MOSFET N-CH 60V 10A TO-262 |
Data Sheet |
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IRFZ14PBF |
Vishay/Siliconix |
MOSFET N-Chan 60V 10 Amp |
Data Sheet |
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