Product Summary

The IRFP26N60L is a HEXFET Power MOSFET. Applications include: Zero Voltage Switching (SMPS), Telecom and Server Power Supplies, Uninterruptible Power Suplies, Motor Control Applications.

Parametrics

IRFP26N60L absolute maximum ratings: (1)ID @ TC = 25℃ Continuous Drain Current, VGS @ 10V: 26 A; (2)ID @ TC = 100℃ Continuous Drain Current, VGS @ 10V: 17 A; (3)IDM, Pulsed Drain Current: 100 A; (4)PD @TC = 25℃, Power Dissipation: 470 W; (5)Linear Derating Factor: 3.8 W/℃; (6)VGS Gate-to-Source Voltage: ±30 V; (7)dv/dt Peak Diode Recovery: 30V/ns; (8)TJ, TSTG, Operating Junction and Storage Temperature Range: -55 to 150℃; (9)Soldering Temperature for 10 seconds: 300℃; (10)Mounting Torque, 6-32 or M3 Screw: 1.1N·m.

Features

IRFP26N60L features: (1)Superfast Body Diode Eliminates the Need for External Diodes in ZVS Applications; (2)Lower Gate Charge Results in Simpler Drive Requirements; (3)Enhanced dV/dt Capabilities Offer Improved Ruggedness; (4)Higher Gate Voltage Threshold Offers Improved Noise Immunity.

Diagrams

IRFP26N60L diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
IRFP26N60L
IRFP26N60L
Vishay/Siliconix
MOSFET N-Chan 600V 26 Amp
Data Sheet
0-331: $8.63
331-500: $7.91
IRFP26N60LPBF
IRFP26N60LPBF
Vishay/Siliconix
MOSFET N-Chan 600V 26 Amp
Data Sheet
0-1: $5.98
1-10: $4.90
10-100: $4.42
100-250: $3.90