Product Summary

IRF5210PBF is a HEXFET power MOSFET. Fifth Generation HEXFET from International Rectifier utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area.

Parametrics

IRF5210PBF absolute maximum ratings: (1)ID at Tc=25℃: -40A; (2)ID at TC=100℃: -29A; (3)IDM: -140A; (4)PD at TC=25℃: 200W; (5)VGS, Gate to Source Voltage: ±20V; (6)EAS: 780mJ.

Features

IRF5210PBF features: (1)Advanced Process technology; (2)Ultra Low On-Resistance; (3)Dynamic dv/dt Rating; (4)175℃ Operating Temperature; (5)Fast Switching; (6)P-Channel; (7)Fully Avalanche Rated; (8)Lead Free.

Diagrams

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
IRF5210PBF
IRF5210PBF
International Rectifier
MOSFET MOSFT PCh -100V -40A 60mOhm 120nC
Data Sheet
0-1: $2.38
1-25: $1.54
25-100: $1.11
100-250: $1.04
Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
IRF500
IRF500
Other

Data Sheet
Negotiable 
IRF510
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Vishay/Siliconix
MOSFET N-Chan 100V 5.6 Amp
Data Sheet
0-730: $0.85
730-1000: $0.82
1000-2000: $0.79
2000-5000: $0.78
IRF510, SiHF510
IRF510, SiHF510
Other

Data Sheet
Negotiable 
IRF510_R4941
IRF510_R4941
Fairchild Semiconductor
MOSFET TO-220AB N-Ch Power
Data Sheet
Negotiable 
IRF510A
IRF510A
Fairchild Semiconductor
MOSFET 100V .2 OHM 33W
Data Sheet
Negotiable 
IRF510A_Q
IRF510A_Q
Fairchild Semiconductor
MOSFET 100V .2 Ohm 33W
Data Sheet
Negotiable