Product Summary

IRF5210PBF is a HEXFET power MOSFET. Fifth Generation HEXFET from International Rectifier utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area.

Parametrics

IRF5210PBF absolute maximum ratings: (1)ID at Tc=25℃: -40A; (2)ID at TC=100℃: -29A; (3)IDM: -140A; (4)PD at TC=25℃: 200W; (5)VGS, Gate to Source Voltage: ±20V; (6)EAS: 780mJ.

Features

IRF5210PBF features: (1)Advanced Process technology; (2)Ultra Low On-Resistance; (3)Dynamic dv/dt Rating; (4)175℃ Operating Temperature; (5)Fast Switching; (6)P-Channel; (7)Fully Avalanche Rated; (8)Lead Free.

Diagrams

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
IRF5210PBF
IRF5210PBF
International Rectifier
MOSFET MOSFT PCh -100V -40A 60mOhm 120nC
Data Sheet
0-1: $2.38
1-25: $1.54
25-100: $1.11
100-250: $1.04
Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
IRF5210PBF
IRF5210PBF
International Rectifier
MOSFET MOSFT PCh -100V -40A 60mOhm 120nC
Data Sheet
0-1: $2.38
1-25: $1.54
25-100: $1.11
100-250: $1.04
IRF520STRL
IRF520STRL

MOSFET N-CH 100V 9.2A D2PAK
Data Sheet
Negotiable 
IRF520STRR
IRF520STRR

MOSFET N-CH 100V 9.2A D2PAK
Data Sheet
0-800: $0.47
IRF5210L
IRF5210L

MOSFET P-CH 100V 40A TO-262
Data Sheet
0-200: $1.49
IRF530SPBF
IRF530SPBF
Vishay/Siliconix
MOSFET N-Chan 100V 14 Amp
Data Sheet
0-1: $1.09
1-10: $0.86
10-100: $0.77
100-250: $0.67
IRF530S, SiHF530S
IRF530S, SiHF530S
Other

Data Sheet
Negotiable