Product Summary

The 2SK3469 is a N-channel silicon power MOSFET.

Parametrics

2SK3469 absolute maximum ratings: (1)Drain-source voltage: 500 V; (2)Continuous drain current: ±12 A; (3)Pulsed drain current: ±48 A; (4)Gate-source voltage: ±30 V; (5)Repetitive or non-repetitive: 12 A; (6)Maximum Avalanche Energy: 217 mJ; (7)Maximum Drain-Source dV/dt: 20 kV/μs; (8)Peak Diode Recovery dV/dt: 5 kV/μs; (9)Max. power dissipation: 2.16 W at Ta=25 ℃, 50 W at Tc=25 ℃; (10)Operating and storage temperature range: -55 to +150 ℃.

Features

2SK3469 features: (1)High speed switching; (2)Low on-resistance; (3)No secondary breadown; (4)Low driving power; (5)Avalanche-proof.

Diagrams

2SK3469 Equivalent circuit schematic diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
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Data Sheet

0-1: $3.89
1-10: $3.50
10-100: $3.09
100-250: $2.99