AD7656BSTZ

Product Summary

The AD7656BSTZ is reduced decoupling pin- and software-compatible versions of AD7656/AD7657/AD7658. The AD7656BSTZ device contains six 16-/ 14-/12-bit, fast, low power successive approximation ADCs in a package designed on the iCMOS process (industrial CMOS). iCMOS is a process combining high voltage silicon with submicron CMOS and complementary bipolar technologies. AD7656BSTZ enables the development of a wide range of high performance analog ICs capable of 33 V operation in a footprint that no previous generation of high voltage parts could achieve. Unlike analog ICs using conven-tional CMOS processes, iCMOS components can accept bipolar input signals while providing increased performance, which dramatically reduces power consumption and package size.

Parametrics

AD7656BSTZ absolute maximum ratings: (1)VDD to AGND, DGND: -0.3 V to +16.5 V; (2)VSS to AGND, DGND: +0.3 V to -16.5 V; (3)VDD to AVCC: VCC-0.3 V to +16.5 V; (4)AVCC to AGND, DGND: -0.3 V to +7 V; (5)DVCC to AVCC: -0.3 V to AVCC + 0.3 V; (6)DVCC to DGND, AGND: -0.3 V to +7 V; (7)AGND to DGND: -0.3 V to +0.3 V; (8)VDRIVE to DGND: -0.3 V to DVCC + 0.3 V; (9)Analog Input Voltage to AGND: VSS -0.3 V to VDD + 0.3 V; (10)Digital Input Voltage to DGND: -0.3 V to VDRIVE + 0.3 V; (11)Digital Output Voltage to DGND: -0.3 V to VDRIVE + 0.3 V; (12)REFIN/REFOUT to AGND: -0.3 V to AVCC + 0.3 V; (13)Input Current to Any Pin Except Supplies: ±10 mA; (14)Storage Temperature Range: -65℃ to +150℃; (15)Junction Temperature: 150℃; (16)Pb-Free Temperature, Soldering Reflow: 260(+0)℃; (17)ESD: 1.5 kV.

Features

AD7656BSTZ features: (1)6 independent ADCs; (2)True bipolar analog inputs; (3)Pin-/software-selectable ranges: ±10 V, ±5 V; (4)Fast throughput rate: 250 kSPS; (5)iCMOS process technology; (6)Low power, 140 mW at 250 kSPS with 5 V supplies; (7)High noise performance with wide bandwidth, 88 dB SNR at 10 kHz input frequency; (8)On-chip reference and reference buffers; (9)High speed parallel, serial, and daisy-chain interface modes; (10)Standby mode: 315 μW maximum; (11)64-lead LQFP.

Diagrams