(Hong Kong)
Product Summary
The 2SC3357-T1 is designed as the NPN epitaxial silicon transistor that has large dynamic range and good current characteristic.
Parametrics
2SC3357-T1 absolute maximum ratings: (1)Collector to Base Voltage: 20V; (2)Collector to Emitter Voltage: 12V; (3)Emitter to Base Voltage: 3.0 V; (4)Collector Current: 100 mA; (5)Total Power Dissipation: 1200 mW; (6)Junction Temperature: 150 ℃; (7)Storage Temperature: -65 to +150℃.
Features
2SC3357-T1 features: (1)Low Noise and High Gain: NF = 1.1 dB TYP., Ga = 8.0 dB TYP. @VCE = 10 V, Ic = 7 mA, f = 1.0 GHz and NF = 1.8 dB TYP., Ga = 9.0 dB TYP. @VCE = 10 V, Ic = 40 mA, f = 1.0 GHz; (2)Large PT in Small Package: PT : 2 W with 16 cm2 x 0.7 mm Ceramic Substrate.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
|---|---|---|---|---|---|---|---|---|---|---|
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 2SC3357-T1 RF |
Other |
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Data Sheet |
Negotiable |
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2SC3357-T1-A RE |
Other |
|
Data Sheet |
Negotiable |
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2SC3357-T1-A RF |
Other |
|
Data Sheet |
Negotiable |
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