Product Summary
The AOD444 is an N-channel enhancement mode field effect transistor. It uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications.
Parametrics
AOD444 absolute maxing ratings: (1)Drain-Source Voltage VDS: max=60V; (2)Gate-Source Voltage VGS: max=±20V; (3)Continuous Drain Current TC=25℃ ID: 12A; TC=100℃ ID: max=12A; (4)Pulsed Drain Current IDM: max=30A; (5)Avalanche Current IAR: max=12A; (6)Repetitive avalanche energy L=0.1mH EAR: max=23mJ; (7)Junction and Storage Temperature Range TJ, TSTG: -55 to 175℃.
Features
AOD444 features: (1)VDS (V) = 60V; (2)ID = 12 A; (3)RDS(ON) < 60 mΩ (VGS = 10V); (4)RDS(ON) < 85 mΩ (VGS = 4.5V).
Diagrams
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AOD444L |
Other |
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Negotiable |
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AOD444 |
MOSFET N-CH 60V 12A TO-252 |
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