(Hong Kong)
Product Summary
The 2N5460 is a P-Channel general purpose amplifier. The 2N5460 is designed primarily for low level audio and general purpose applications with high impedance signal sources.
Parametrics
2N5460 absolute maximum ratings: (1)VDG Drain-Gate Voltage: - 40 V; (2)VGS Gate-Source Voltage: 40 V; (3)IGF Forward Gate Current: 10 mA; (4)TJ ,Tstg Operating and Storage Junction Temperature Range: -55 to +150 ℃.
Features
2N5460 electrical characteristics: (1)V(BR)GSS Gate-Source Breakdown Voltage: 40 V; (2)IGSS Gate Reverse Current: 5.0 nA at VGS = 20 V, VDS = 0; (3)VGS(off) Gate-Source Cutoff Voltage: 0.75 to 6.0 V; (4)VGS Gate-Source Voltage: 0.5 to 4.0 V.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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 2N5460_D27Z |
Fairchild Semiconductor |
JFET P-Channel Transistor General Purpose |
Data Sheet |
Negotiable |
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2N5460_D74Z |
Fairchild Semiconductor |
JFET P-Channel Transistor General Purpose |
Data Sheet |
Negotiable |
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2N5460_D75Z |
Fairchild Semiconductor |
JFET P-Channel Transistor General Purpose |
Data Sheet |
Negotiable |
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2N5460_L99Z |
Fairchild Semiconductor |
JFET P-Channel Transistor General Purpose |
Data Sheet |
Negotiable |
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2N5460_Q |
Fairchild Semiconductor |
JFET P-Channel Transistor General Purpose |
Data Sheet |
Negotiable |
|
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 |
2N5460-E3 |
Vishay/Siliconix |
JFET 40V 1mA |
Data Sheet |
Negotiable |
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2N5460G |
ON Semiconductor |
JFET 40V 10mA |
Data Sheet |
Negotiable |
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 |
2N5460 |
Central Semiconductor |
JFET P-Ch Junc FET |
Data Sheet |
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