(Hong Kong)
Product Summary
The SGL160N60UFD is an Insulated Gate Bipolar Transistor. It provides low conduction and switching losses. The SGL160N60UFD is designed for applications such as motor control and general inverters where high speed switching is a required feature. The SGL160N60UFD is used in AC & DC motor controls, general purpose inverters, robotics, servo controls, and power supplies.
Parametrics
SGL160N60UFD absolute maximum ratings: (1)VCES Collector-Emitter Voltage: 600 V; (2)VGES Gate-Emitter Voltage: ± 20 V; (3)IC Collector Current @ TC = 25℃: 160 A; Collector Current @ TC = 100℃: 80 A; (4)ICM Pulsed Collector Current: 300 A; (5)IF Diode Continuous Forward Current @ TC =100℃: 25 A; (6)IFM Diode Maximum Forward Current: 280 A; (7)PD Maximum Power Dissipation @ TC = 25℃: 250 W; Maximum Power Dissipation @ TC = 100℃: 100 W; (8)TJ Operating Junction Temperature: -55 to +150 ℃; (9)Tstg Storage Temperature Range: -55 to +150 ℃; (10)TL Maximum Lead Temp. for Soldering Purposes, 1/8 from Case for 5 Seconds: 300 ℃.
Features
SGL160N60UFD features: (1)High speed switching; (2)Low saturation voltage : VCE(sat) = 2.1 V @ IC = 80A; (3)High input impedance; (4)CO-PAK, IGBT with FRD: trr = 75nS (typ.).
Diagrams
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SGL160N60UFDTU |
Fairchild Semiconductor |
IGBT Transistors Dis High Perf IGBT |
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