Product Summary
The CY7C1041CV33-10ZXI is a high performance CMOS static RAM organized as 262,144 words by 16 bits. To write to the CY7C1041CV33-10ZXI, take Chip Enable (CE) and Write Enable (WE) inputs LOW. If Byte Low Enable (BLE) is LOW, then data from IO pins (IO0 through IO7), is written into the location specified on the address pins (A0 through A17). If Byte High Enable (BHE) is LOW, then data from IO pins (IO8 through IO15) is written into the location specified on the address pins (A0 through A17). To read from the CY7C1041CV33-10ZXI, take Chip Enable (CE) and Output Enable (OE) LOW while forcing the Write Enable (WE) HIGH. If Byte Low Enable (BLE) is LOW, then data from the memory location specified by the address pins appear on IO0 to IO7. If Byte High Enable (BHE) is LOW, then data from memory appears on IO8 to IO15. For more information, see the Truth Table on page 9 for a complete description of Read and Write modes.
Parametrics
CY7C1041CV33-10ZXI absolute maximum ratings: (1)Storage Temperature: –65℃ to +150℃; (2)Ambient Temperature with; (3)Power Applied: –55℃ to +125℃; (4)Supply Voltage on VCC Relative to GND: –0.5V to +4.6V; (5)DC Voltage Applied to Outputs; (6)in High Z State: –0.5V to VCC+0.5V; (7)DC Input Voltage: –0.5V to VCC+0.5V; (8)Current into Outputs (LOW): 20 mA.
Features
CY7C1041CV33-10ZXI features: (1)Temperature ranges, Commercial: 0℃ to 70℃; Industrial: –40℃ to 85℃; Automotive-A: –40℃ to 85℃; Automotive-E: –40℃ to 125℃; (2)Pin and function compatible with CY7C1041BV33; (3)High speed, tAA = 10 ns (Commercial, Industrial and Automotive-A); tAA = 12 ns (Automotive-E); (4)Low active power, 324 mW (max); (5)2.0V data retention; (6)Automatic power down when deselected; (7)TTL-compatible inputs and outputs; (8)Easy memory expansion with CE and OE features; (9)Available in Pb-free and non Pb-free 44-pin 400 Mil SOJ, 44-pin TSOP II and 48-Ball FBGA packages.
Diagrams
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