(Hong Kong)
Product Summary
The CEP6060R is an N-channel enhancement mode field effect transistor.
Parametrics
CEP6060R absolute maximum ratings: (1)Drain-Source Voltage VDS: 60V; (2)Gate-Source Voltage VGS: ±20V; (3)Drain Current-Continuous ID: 60A; (4)Drain Current-Pulsed IDM: 114A; (5)Maximum Power Dissipation @ TC = 25 ℃ PD: 100W; - Derate above 25 ℃ PD: 0.7W/℃; (6)Single Pulsed Avalanche Energy EAS: 168mJ; (7)Single Pulsed Avalanche Current IAS: 58A; (8)Operating and Store Temperature Range TJ,Tstg: -65 to 175 ℃.
Features
CEP6060R features: (1)60V, 60A, RDS(ON) = 25mΩ @VGS = 10V; (2)Super high dense cell design for extremely low RDS(ON); (3)High power and current handing capability; (4)Lead free product is acquired; (5)TO-220 & TO-263 package.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
|---|---|---|---|---|---|---|---|---|---|---|
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 CEP6060R |
Other |
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Data Sheet |
Negotiable |
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| Image | Part No | Mfg | Description | |
Pricing (USD) |
Quantity | ||||
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CEP6060N |
Other |
|
Data Sheet |
Negotiable |
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CEP6060R |
Other |
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Data Sheet |
Negotiable |
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CEP60N06G |
Other |
|
Data Sheet |
Negotiable |
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CEP60N10 |
Other |
|
Data Sheet |
Negotiable |
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CEP6186 |
Other |
|
Data Sheet |
Negotiable |
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CEP62A2 |
Other |
|
Data Sheet |
Negotiable |
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