(Hong Kong)
Product Summary
The BLT50 is an NPN silicon planar epitaxial transistor encapsulated in a SOT223 surface mounted envelope and designed primarily for use in hand-held radio equipment in the 470 MHz communications band.
Parametrics
BLT50 absolute maximum ratings: (1)VCBO, collector-base voltage open emitter: 20 V; (2)VCEO, collector-emitter voltage open base: 10 V; (3)VEBO, emitter-base voltage open collector: 3V; (4)IC, IC(AV), collector current DC or average value: 500 mA; (5)ICM, collector current peak value: 1.5 A; (6)Ptot, total power dissipation: 2W; (7)Tstg, storage temperature range: -65 to 150℃; (8)Tj, operating junction temperature: 175℃.
Features
BLT50 features: (1)SMD encapsulation; (2)Gold metallization ensures excellent reliability.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
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 BLT50 T/R |
NXP Semiconductors |
Transistors RF Bipolar Power TAPE-7 TNS-RFPR |
Data Sheet |
Negotiable |
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BLT50,115 |
NXP Semiconductors |
Transistors RF Bipolar Power TAPE-7 TNS-RFPR |
Data Sheet |
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BLT50 |
Other |
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Data Sheet |
Negotiable |
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