Product Summary

The BLT50 is an NPN silicon planar epitaxial transistor encapsulated in a SOT223 surface mounted envelope and designed primarily for use in hand-held radio equipment in the 470 MHz communications band.

Parametrics

BLT50 absolute maximum ratings: (1)VCBO, collector-base voltage open emitter: 20 V; (2)VCEO, collector-emitter voltage open base: 10 V; (3)VEBO, emitter-base voltage open collector: 3V; (4)IC, IC(AV), collector current DC or average value: 500 mA; (5)ICM, collector current peak value: 1.5 A; (6)Ptot, total power dissipation: 2W; (7)Tstg, storage temperature range: -65 to 150℃; (8)Tj, operating junction temperature: 175℃.

Features

BLT50 features: (1)SMD encapsulation; (2)Gold metallization ensures excellent reliability.

Diagrams

BLT50 pin configuration

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
BLT50 T/R
BLT50 T/R

NXP Semiconductors

Transistors RF Bipolar Power TAPE-7 TNS-RFPR

Data Sheet

Negotiable 
BLT50,115
BLT50,115

NXP Semiconductors

Transistors RF Bipolar Power TAPE-7 TNS-RFPR

Data Sheet

0-1: $0.91
1-25: $0.82
25-100: $0.80
100-250: $0.75
BLT50
BLT50

Other


Data Sheet

Negotiable