Product Summary
The BCV64B is a PNP general purpose double transistor. It is used in General purpose switching and amplification; For use in Schmitt-trigger applications.
Parametrics
BCV64B absolute maximum ratings: (1)VCBO collector-base voltage TR1: -30 V; TR2: -6 V; (2)VCEO collector-emitter voltage TR1: -30 V; TR2: -6 V; (3)VEBO emitter-base voltage: -6 V; (4)IC collector current (DC): -100 mA; (5)ICM peak collector current: -200 mA; (6)IB base current (DC): -100 mA; (7)Ptot total power dissipation: 250 mW; (8)Tstg storage temperature: -65 to +150 ℃; (9)Tj junction temperature: 150 ℃; (10)Tamb operating ambient temperature: -65 to +150 ℃.
Features
BCV64B features: (1)Low current (max. 100 mA); (2)Low voltage (max. 30 and 6 V).
Diagrams
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![]() BCV64B T/R |
![]() NXP Semiconductors |
![]() Transistors Bipolar (BJT) TRANS GP TAPE-7 |
![]() Data Sheet |
![]() Negotiable |
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![]() BCV64B,215 |
![]() NXP Semiconductors |
![]() Transistors Bipolar (BJT) TRANS GP TAPE-7 |
![]() Data Sheet |
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![]() BCV64B |
![]() Other |
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![]() Data Sheet |
![]() Negotiable |
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