Product Summary

The 2sk4111 is the Silicon N Channel MOS FET which is used for switching regulator applications.

Parametrics

2sk4111 absolute maximum ratings: (1)Drain-source voltage: 600 V ; (2)Drain-gate voltage (RGS = 20 kΩ): 600 V ; (3)Gate-source voltage: ±30 V; (4)Drain power dissipation (Tc = 25℃): 45 W ; (5)Single pulse avalanche energy: 363 mJ ; (6)Avalanche current: 10 A ; (7)Repetitive avalanche energy (Note 3): 4.5 mJ ; (8)Channel temperature: 150 ℃; (9)Storage temperature: -55 to 150℃.

Features

2sk4111 features: (1)Low drain-source ON resistance: RDS (ON) = 0.54 Ω (typ.) ; (2)High forward transfer admittance: |Yfs| = 8.5S (typ.); (3)Low leakage current: IDSS = 100 μA (max) (VDS = 600 V); (4)Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA).

Diagrams

2sk4111 dimensions

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
2SK4111(Q,T)
2SK4111(Q,T)

MOSFET N-CH 600V 10A TO220NIS
Data Sheet
0-100: $1.27
Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
2SK4002
2SK4002
Other

Data Sheet
Negotiable 
2SK4003
2SK4003
Other

Data Sheet
Negotiable 
2SK4003(Q)
2SK4003(Q)

MOSFET N-CH 600V 3A PW-MOLD
Data Sheet
Negotiable 
2SK4043LS
2SK4043LS
ON Semiconductor
MOSFET POWER MOSFET
Data Sheet
0-1: $2.03
1-25: $1.63
25-100: $1.49
100-250: $1.34
2SK4016(Q)
2SK4016(Q)
Toshiba
MOSFET MOSFET N-Ch 600V 13A Rdson=0.33Ohm
Data Sheet
Negotiable 
2SK4015(Q)
2SK4015(Q)

MOSFET N-CH 600V 10A TO-220SIS
Data Sheet
0-100: $1.40