(Hong Kong)
Product Summary
The 2SK2611 is a TOSHIBA field effect transistor.
Parametrics
2SK2611 absolute maximum ratings: (1)Drain-source voltage: 900 V ; (2)Drain-gate voltage (RGS = 20 kΩ): 900 V ; (3)Gate-source voltage: ±30 V ; (4)Drain current DC: 9 A ; (5)Pulse: 27 A ; (6)Drain power dissipation (Tc = 25℃): 150 W ; (7)Single pulse avalanche energy: 663 mJ ; (8)Avalanche current: 9 A ; (9)Repetitive avalanche energy: 15 mJ ; (10)Channel temperature: 150 ℃; (11)Storage temperature range: -55~150 ℃.
Features
2SK2611 features: (1)Low drain-source ON resistance: RDS (ON) = 1.1 Ω (typ.); (2)High forward transfer admittance: |Yfs|= 7.0 S (typ.); (3)Low leakage current: IDSS = 100 μA (max) (VDS = 500 V); (4)Enhancement mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA).
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
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 2SK2611 |
Other |
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Data Sheet |
Negotiable |
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2SK2611(F,T) |
Toshiba |
MOSFET MOSFET N-Ch 900V 9A Rdson 1.4 Ohm |
Data Sheet |
Negotiable |
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