(Hong Kong)
Product Summary
This 2N5172 is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 10. See PN100 for characteristics.
Parametrics
2N5172 absolute maximum ratings: (1)VCEO, Collector-Emitter Voltage: 25 Vdc; (2)VCBO, Collector-Base Voltage: 25 Vdc; (3)VEBO, Emitter-Base Voltage: 5.0 Vdc; (4)IC, Collector Current: 500 mA.
Features
2N5172 features: (1)PD Total Device Dissipation Derate above 25℃: 625mW; 5.0; (2)mW/℃; (3)RqJC Thermal Resistance, Junction to Case: 83.3 ℃/W; (4)RqJA Thermal Resistance, Junction to Ambient: 200 ℃/W.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
 2N5172 |
Central Semiconductor |
Transistors Bipolar (BJT) NPN Gen Pur SS |
Data Sheet |
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2N5172_D27Z |
Fairchild Semiconductor |
Transistors Bipolar (BJT) NPN Transistor General Purpose |
Data Sheet |
Negotiable |
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2N5172_D75Z |
Fairchild Semiconductor |
Transistors Bipolar (BJT) NPN Transistor General Purpose |
Data Sheet |
Negotiable |
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2N5172_Q |
Fairchild Semiconductor |
Transistors Bipolar (BJT) NPN Transistor General Purpose |
Data Sheet |
Negotiable |
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2N5172_D74Z |
Fairchild Semiconductor |
Transistors Bipolar (BJT) NPN Transistor General Purpose |
Data Sheet |
Negotiable |
|
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|
2N5172_D26Z |
Fairchild Semiconductor |
Transistors Bipolar (BJT) NPN Transistor General Purpose |
Data Sheet |
Negotiable |
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