Product Summary

The SPP47N10L is a SIPMOS Power-Transistor.

Parametrics

SPP47N10L absolute maximum ratings: (1)Continuous drain current ID: 47A at TC=25℃; 33A at TC=100℃; (2)Pulsed drain current TC=25℃ ID puls: 188A; (3)Avalanche energy, single pulse ID=47 A , VDD=25V, RGS=25Ω EAS: 400 mJ; (4)Avalanche energy, periodic limited by Tjmax EAR: 17.5mJ; (5)Reverse diode dv/dt IS=47A, VDS=0V, di/dt=200A/μs dv/dt: 6 kV/μs; (6)Gate source voltage VGS: ±20 V; (7)Power dissipation TC=25℃ Ptot: 175 W; (8)Operating and storage temperature Tj , Tstg: -55 to +175 ℃.

Features

SPP47N10L features: (1)N-Channel; (2)Enhancement mode; (3)Logic Level; (4)175℃ operating temperature; (5)Avalanche rated; (6)dv/dt rated.

Diagrams

SPP47N10L diagram

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