(Hong Kong)
Product Summary
The IRFP4468PBF is a HEXFET Power MOSFET. Applications include: High Efficiency Synchronous Rectification in SMPS, Uninterruptible Power Supply, High Speed Power Switching, Hard Switched and High Frequency Circuits.
Parametrics
IRFP4468PBF absolute maximum ratings: (1)ID @ TC = 25℃ Continuous Drain Current, VGS @ 10V: 290 A; (2)ID @ TC = 100℃ Continuous Drain Current, VGS @ 10V: 200 A; (3)ID @ TC = 25℃, Continuous Drain Current, VGS @ 10V: 195 A; (4)IDM, Pulsed Drain Current: 1120 A; (5)PD @TC = 25℃, Maximum Power Dissipation: 520 W; (6)Linear Derating Factor: 3.4 W/℃; (7)VGS Gate-to-Source Voltage: ±20 V; (8)dv/dt Peak Diode Recovery: 10V/ns; (9)TJ, TSTG, Operating Junction and Storage Temperature Range: -55 to 175℃; (10)Soldering Temperature for 10 seconds: 300℃; (11)Mounting Torque, 6-32 or M3 Screw: 10lb·in (1.1N·m).
Features
IRFP4468PBF benefits: (1)Improved Gate, Avalanche and Dynamic dV/dt Ruggedness; (2)Fully Characterized Capacitance and Avalanche SOA; (3)Enhanced body diode dV/dt and dI/dt Capability; (4)Lead-Free.
Diagrams
| Image | Part No | Mfg | Description |  |
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 IRFP4468PBF |
International Rectifier |
MOSFET MOSFT 100V 290A 2.6mOhm 360nC Qg |
Data Sheet |
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| Image | Part No | Mfg | Description | |
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Quantity | ||||||||||||
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Data Sheet |
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Data Sheet |
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Vishay/Siliconix |
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Data Sheet |
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Data Sheet |
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