Product Summary
The IRFB3607PBF is a HEXFET Power MOSFET. It has some applications:(1)High Efficiency Synchronous Rectification in SMPS; (2)Uninterruptible Power Supply; (3)High Speed Power Switching; (4)Hard Switched and High Frequency Circuits.
Parametrics
IRFB3607PBF absolute maximum ratings: (1)ID @ TC = 25℃ Continuous Drain Current, VGS @ 10V: 80A; (2)D @ TC = 100℃ Continuous Drain Current, VGS @ 10V: 56A; (3)IDM Pulsed Drain Current: 310A; (4)PD @TC = 25℃ Maximum Power Dissipation: 140W; (5)VGS Gate-to-Source Voltage: ±20V; (6)dv/dt Peak Diode Recovery: 27V/ns; (7)TJ,TSTG: -55 to + 175℃.
Features
IRFB3607PBF features: (1)Improved Gate, Avalanche and Dynamic dv/dt Ruggedness; (2)Fully Characterized Capacitance and Avalanche SOA; (3)Enhanced body diode dV/dt and dI/dt Capability.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
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IRFB3607PBF |
International Rectifier |
MOSFET MOSFT 75V 80A 9.0mOhm 56nC Qg |
Data Sheet |
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Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
IRFB11N50A |
Vishay/Siliconix |
MOSFET N-Chan 500V 11 Amp |
Data Sheet |
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IRFB11N50APBF |
Vishay/Siliconix |
MOSFET N-Chan 500V 11 Amp |
Data Sheet |
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IRFB13N50A |
Vishay/Siliconix |
MOSFET N-Chan 500V 14 Amp |
Data Sheet |
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IRFB13N50APBF |
Vishay/Siliconix |
MOSFET N-Chan 500V 14 Amp |
Data Sheet |
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IRFB16N50K |
Vishay/Siliconix |
MOSFET N-Chan 500V 17 Amp |
Data Sheet |
Negotiable |
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IRFB16N50KPBF |
Vishay/Siliconix |
MOSFET N-Chan 500V 17 Amp |
Data Sheet |
Negotiable |
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