(Hong Kong)
Product Summary
The 2SK3607-01MR is a N-channel silicon power MOSFET.
Parametrics
2SK3607-01MR absolute maximum ratings: (1)Drain-source voltage: 200 V; (2)Continuous drain current: ±18 A; (3)Pulsed drain current: ±72 A; (4)Gate-source voltage: ±30 V; (5)Non-repetitive Avalanche current: 18 A; (6)Maximum Avalanche Energy: 125.5 mJ; (7)Maximum Drain-Source dV/dt: 20 kV/μs; (8)Peak Diode Recovery dV/dt: 5 kV/μs; (9)Max. power dissipation: Ta=25℃, 2.16 W, Tc=25℃, 37 W; (10)Operating and storage temperature range: +150 ℃.
Features
2SK3607-01MR features: (1)High speed switching; (2)Low on-resistance; (3)No secondary breadown; (4)Low driving power; (5)Avalanche-proof.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
 2SK3607-01MR |
Other |
|
Data Sheet |
Negotiable |
|
||||||||||||
| Image | Part No | Mfg | Description | |
Pricing (USD) |
Quantity | ||||||||||||
|
2SK3001 |
Other |
|
Data Sheet |
Negotiable |
|
||||||||||||
|
2SK3009 |
Other |
|
Data Sheet |
Negotiable |
|
||||||||||||
|
2SK3012 |
Other |
|
Data Sheet |
Negotiable |
|
||||||||||||
|
2SK3013 |
Other |
|
Data Sheet |
Negotiable |
|
||||||||||||
 |
2SK3017 |
|
MOSFET N-CH 900V 8.5A TO-3PN |
Data Sheet |
Negotiable |
|
||||||||||||
|
2SK3017(F) |
Toshiba |
MOSFET MOSFET N-Ch 900V 8.5A Rdson 1.25 Ohm |
Data Sheet |
|
|
||||||||||||
