(Hong Kong)
Product Summary
The 2SK2876 is a N-channel MOS-FET which belongs to FAP-IIS Series. With 500V drain source voltage, the max power dissipation is 30W. The thermal resistance is 4,17 ℃/W at the condition of channel to case, but 62,5℃/W when the condition is channel to air. It is widely applied in switching regulators, UPS, DC-DC converters and some other general purpose power amplifier.
Parametrics
2SK2876 absolute Maximum Ratings: (1)Drain-Source-Voltage, Vds: 500 V; (2)Continous Drain Current, Id: ±6 A; (3)Pulsed Drain Current, Id(puls): ±24 A; (4)Gate-Source-Voltage, Vgs: ±35 V; (5)Repetitive or Non-Repetitive (Tch ≤ 150℃), Iar: 6 A; (6)Avalanche Energy, Eas: 196.9 mJ; (7)Max. Power Dissipation, Pd: 30 W; (8)Operating and Storage Temperature Range, Tch: 150 ℃; (9)Operating and Storage Temperature Range, Tstg: -55 ~ +150 ℃.
Features
2SK2876 features:(1)High Speed Switching; (2)Low On-Resistance; (3)No Secondary Breakdown; (4)Low Driving Power; (5)High Voltage; (6)VGS = ± 30V Guarantee; (7)Repetitive Avalanche Rated.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
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 2SK2876-01MR |
Other |
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Data Sheet |
Negotiable |
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2SK2002-01MR |
Other |
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Data Sheet |
Negotiable |
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2SK2003-01MR |
Other |
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Data Sheet |
Negotiable |
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2SK2007 |
Other |
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Data Sheet |
Negotiable |
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2SK2008 |
Other |
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Data Sheet |
Negotiable |
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2SK2009 |
Other |
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Data Sheet |
Negotiable |
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2SK2010 |
Other |
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Data Sheet |
Negotiable |
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