Product Summary

The STP14NK60ZFP is a zener-protected superMESH MOSFET. It is obtained through an extreme optimization of the well established strip-based PowerMESH layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh products. The applications of the STP14NK60ZFP include: high current, high speed switching, ideal for off-line power supplies, adaptors and pfc, lighting.

Parametrics

STP14NK60ZFP absolute maximum ratings: (1)VDS Drain-source Voltage (VGS = 0): 600 V; (2)VDGR Drain-gate Voltage (RGS = 20 kΩ): 600 V; (3)VGS Gate-source Voltage: ±30 V; (4)ID Drain Current (continuous) at TC = 25℃: 13.5 A; (5)ID Drain Current (continuous) at TC = 100℃: 8.5 A; (6)IDM Drain Current (pulsed): 54 A; (7)PTOT Total Dissipation at TC = 25℃: 160 W; Derating Factor: 1.28 W/℃; (8)VESD(G-S) Gate source ESD (HBM-C= 100pF, R= 1.5kΩ): 4000 V; (9)dv/dt (1) Peak Diode Recovery voltage slope: 4.5 V/ns; (10)Tj Tstg Operating Junction Temperature Storage Temperature: -55 to 150 ℃.

Features

STP14NK60ZFP featues: (1)typical rds(on) = 0.45Ω; (2)extremely high dv/dt capability; (3)100% avalanche tested; (4)gate charge minimized; (5)very low intrinsic capacitances; (6)very good manufacturing repeatibility.

Diagrams

STP14NK60ZFP diagram

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