(Hong Kong)
Product Summary
The NTJD4152P is a Trench Small Signal MOSFET. The applications of the NTJD4152P include: (1)Load/Power Management; (2)Charging Circuits; (3)Load Switching; (4)Cell Phones, Computing, Digital Cameras, MP3s and PDAs.
Parametrics
NTJD4152P absolute maximum ratings: (1)Drain-to-Source Voltage VDSS: -20 V; (2)Gate-to-Source Voltage VGS: ±12 V; (3)Continuous Drain Current Steady State ID -0.88 A; (4)Power Dissipation Steady State PD: 0.272 W; (5)Continuous Drain Current t ≤ 5 s ID: -1.0 A; (6)Power Dissipation t ≤ 5 s PD: 0.35 W; (7)Pulsed Drain Current t ≤ 10 μs IDM: ±3.0 A; (8)Operating Junction and Storage Temperature TJ, TSTG: -55 to 150℃; (9)Continuous Source Current (Body Diode) IS: -0.48 A; (10)Lead Temperature for Soldering Purposes(1/8 from case for 10 s)TL: 260 ℃.
Features
NTJD4152P features: (1)Leading Trench Technology for Low RDS(ON) Performance; (2)Small Footprint Package (SC70-6 Equivalent); (3)ESD Protected Gate; (4)Pb-Free Package is Available.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
 NTJD4152PT1 |
ON Semiconductor |
MOSFET 20V 0.88A P-Channel |
Data Sheet |
Negotiable |
|
||||||||||||
|
NTJD4152PT1G |
ON Semiconductor |
MOSFET 20V 0.88mA P-Channel ESD Protection |
Data Sheet |
|
|
||||||||||||
